Simulation, design, and fabrication of thin-film resistive-gate GaAs charge coupled devices

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	271-274
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - Dec 1990
Externally published	Yes
Event	1990 International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 9 1990 → Dec 12 1990

ASJC Scopus Subject Areas

@article{f454b48503144352a7f499bfb931799d,

title = "Simulation, design, and fabrication of thin-film resistive-gate GaAs charge coupled devices",

author = "Nazmul Ula and G. Cooper and C. Davidson and Swierkowski, \{S. P.\} and Hunt, \{Charles E.\}",

year = "1990",

month = dec,

language = "English",

pages = "271--274",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

note = "1990 International Electron Devices Meeting ; Conference date: 09-12-1990 Through 12-12-1990",

}

TY - JOUR

T1 - Simulation, design, and fabrication of thin-film resistive-gate GaAs charge coupled devices

AU - Ula, Nazmul

AU - Cooper, G.

AU - Davidson, C.

AU - Swierkowski, S. P.

AU - Hunt, Charles E.

PY - 1990/12

Y1 - 1990/12

UR - https://www.scopus.com/pages/publications/0025576485

UR - https://www.scopus.com/pages/publications/0025576485#tab=citedBy

M3 - Conference article

AN - SCOPUS:0025576485

SN - 0163-1918

SP - 271

EP - 274

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1990 International Electron Devices Meeting

Y2 - 9 December 1990 through 12 December 1990

ER -